论文部分内容阅读
提出了电子束退火制备MgB2超导薄膜新工艺。在对电子束退火制备MgB2超导薄膜可行性进行理论研究的基础上,使用EBW-6型电子束热处理设备,在真空度5.0×10-3Pa、加速电压40 kV、束流2mA、束斑14.2mm、退火时间1.5 s的条件下对[B(10 nm)/Mg(15 nm)]4/SiC夹层结构前驱膜进行了退火实验,得到了零电阻温度为30.3K、转变宽度ΔTc为0.4K、临界电流密度(5 K、0 T)为5.0×106A/cm2、表面平整的MgB2超导薄膜。证明了电子束退火制备MgB2薄膜是切实可行的。该工艺可以推广到大面积MgB2超导薄膜和MgB2线带材的制备。
The new technology of electron beam annealing for preparing MgB2 superconducting thin films was proposed. Based on the theoretical research on the feasibility of electron beam annealing for the preparation of MgB2 superconducting thin films, EBW-6 electron beam heat treatment equipment was used in the vacuum degree of 5.0 × 10-3Pa, accelerating voltage of 40kV, beam current of 2mA and beam spot of 14.2 Annealing experiment was carried out on the precursor film of [B (10 nm) / Mg (15 nm)] 4 / SiC sandwich structure under the conditions of 1.5 mm annealing time and 1.5 s anneal time, and the zero resistance temperature was 30.3K and the transition width ΔTc was 0.4K , The critical current density (5 K, 0 T) is 5.0 × 106A / cm2, surface smooth MgB2 superconducting thin films. It is proved that the preparation of MgB2 thin film by electron beam annealing is feasible. The process can be extended to a large area MgB2 superconducting film and MgB2 wire strip preparation.