本文在分析栅控混合管（ＧＣＨＴ）物理机制的基础上，提出了一种新的计算ＳＯＩ／ＧＣＨＴ集电极电流的解析模型．在同时考虑扩散及漂移电流的基础上，建立了栅控电流模型，确立了表面势与外加基极电压的关系．从而成功地解释了混合器件与相应双极器件在高基极电压下集电极电流趋向一致的实验现象，模型计算结果与ＰＩＳＣＥＳ模拟结果及实验结果吻合较好． Based on the analysis of the physical mechanism of GCHT, a new analytical model for calculating collector current of SOI / GCHT is proposed. Based on the consideration of diffusion and drift currents, a model of gate current control is established, and the relationship between the surface potential and the applied base voltage is established. The experimental results that the collector current tends to be consistent at the high base voltage of the hybrid device and the corresponding bipolar device have been successfully explained. The model calculation results agree well with the PISCES simulation results and the experimental results.