论文部分内容阅读
本文介绍在引进的CMOS生产线上,利用等温两步氯化氢氧化技术,研究工业化大生产中薄栅介质膜的电流-电压特性及其击穿特性,结果表明,合理的清洗方法是制备高质量氧化膜的前提,等温两步HCl氧化技术是工业化大生产中行之有效的方法.
This paper introduces the current-voltage characteristics and breakdown characteristics of thin gate dielectric films in industrialized large-scale production using the isothermal two-step hydrogen chloride oxidation technology introduced in the CMOS production line. The results show that a reasonable cleaning method is to prepare high quality oxide film The premise of isothermal two-step HCl oxidation technology is an effective way to industrialize large-scale production.