论文部分内容阅读
应用脉冲激光沉积(PLD)技术在氮化处理后的蓝宝石衬底上外延生长AlN薄膜。研究了氮化处理时间对AlN薄膜结构性能和表面形貌的影响,利用原位反射式高能电子衍射(RHEED)对生长过程进行实时观测,利用高分辨X射线衍射仪(HRXRD)和扫描电子显微镜(SEM)对AlN薄膜的结构性能以及表面形貌等进行表征和分析。结果表明,随着氮化时间的增加,AlN形核种子数量增加并逐渐有序,促进AlN薄膜由多晶转为单晶并提高其晶体质量,有利于AlN薄膜由三维生长转为二维生长,改善AlN薄膜表面形貌。为采用PLD技术制备高质量AlN基器件提供了一种新思路。
AlN films were epitaxially grown on nitrided sapphire substrates by pulsed laser deposition (PLD). The effects of nitriding time on the structure and surface morphology of AlN thin films were investigated. The growth of AlN films was observed by RHEED in real time. High resolution X-ray diffraction (HRXRD) and scanning electron microscopy (SEM) were used to characterize and analyze the structure and surface morphology of AlN thin films. The results showed that with the increase of nitriding time, the number of AlN nucleation seeds increased and gradually ordered, which promoted the transformation from polycrystalline to single crystal and improved the crystal quality of AlN film, which facilitated the transformation of AlN film from three-dimensional to two-dimensional , Improve the surface morphology of AlN film. It provides a new idea for preparing high quality AlN based devices by using PLD technology.