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利用复合速度的大小判断HgCdTe光导探测器表面的好坏,可确定制作光导器件较好的表面工艺条件。实验表明,磨料粒度大小、晶片表面腐蚀时间长短及晶片表面形貌与表面复合速度密切相关。Auger谱与XPS谱分析表明,腐蚀晶片后的表面沾污和自然氧化是无法克服的。因此,晶片表面采用阳极氧化工艺自生长氧化膜是必要的。通过低电流溶解,在搅拌电解液下电腐蚀后再进行阳极氧化,可改进器件表面状况。它比用粗磨料磨后腐蚀的晶片表面复合速度减小1～2个量级。
The use of composite speed to determine the size of HgCdTe photoconductive detector surface is good or bad, to determine the production of optical devices better surface conditions. Experiments show that the particle size of the abrasive, the surface etching time and wafer surface morphology and surface recombination speed are closely related. Auger spectrum and XPS spectrum analysis show that the surface contamination and natural oxidation after etching the wafer can not be overcome. Therefore, it is necessary to grow the oxide film on the surface of the wafer by using the anodization process. By low-current dissolution, the electrolytic solution is subjected to anodic oxidation under agitation of the electrolyte to improve the surface condition of the device. It is 1 to 2 orders of magnitude slower than the composite surface etched with coarse abrasive.