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用能量为300eV的入射电子测量了InP(100)与(111)面的电子能量损失谱,识别了能量损失为15.2eV的峰对应于InP的体等离子体损失,11.7eV和8.7eV 的两个峰分别由In的体和表面等离子体损失所引起.用费米能级以上1.8 eV和 4.0eV处存在两个空态.解释了19.3eV、20.2eV、22.7eV,3.8eV和 6.0eV 几个损失峰分别对应于从In 4d芯能级和价带到上述空态的跃迁.In的体和表面等离子体损失峰的存在说明表面形成了In岛.根据同纯In样品损失谱强度的比较,估计了表面In岛所占的面积.表面In岛是氩离子刻蚀所造成,经过退火,In岛所占面积缩小,但厚度增大.InP(100)表面形成的In岛比(111)表面更不易消除.
The electron energy loss spectra of the InP (100) and (111) planes were measured with incident electrons at an energy of 300 eV, and it was identified that the peak with an energy loss of 15.2 eV corresponds to the bulk plasma loss of InP, two of 11.7 eV and 8.7 eV Peaks are caused by the bulk and surface plasmon losses of In, respectively. There are two vacant states at 1.8 eV and 4.0 eV above the Fermi level Several of 19.3 eV, 20.2 eV, 22.7 eV, 3.8 eV and 6.0 eV are explained The loss peaks correspond to the transitions from the In 4d core energy level and the valence band to the above empty states, respectively. The existence of the In and the surface plasmon loss peaks indicate that In islands are formed on the surface.According to the comparison of the loss spectra intensities of pure In samples, The surface area of the In In island is estimated to be caused by argon ion etching, and the surface area of the In island is reduced but the thickness is increased by annealing. The In Island (111) surface formed on the InP (100) More difficult to eliminate.