论文部分内容阅读
We report the simulation and experimental results of 1.3-μm InGaAsP/InP multiple quantum well(MQW)electro-absorption modulators(EAMs).In this work,the quantum confined Stark effect of the EAM is systematically analyzed through the finite element method.An optimized structure of the 1.3-μm InGaAsP/InP QW EAM is proposed for applications in 100 G ethernet.Then 1.3-μm InGaAsP/InP EAMs with f_(-3dB) bandwidth of over 20 GHz and extinction ratio over 20 dB at 3 V bias voltage are demonstrated.
We report the simulation and experimental results of 1.3-μm InGaAsP / InP multiple quantum well (MQW) electro-absorption modulators (EAMs). In this work, the quantum confined Stark effect of the EAM is systematically analyzed through the finite element method. An optimized structure of the 1.3-μm InGaAsP / InP QW EAM is proposed for applications in 100 G ethernet.Then 1.3-μm InGaAsP / InP EAMs with f_ (-3 dB) bandwidth of over 20 GHz and extinction ratio over 20 dB at 3 V bias voltage are demonstrated.