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为避免传统的探针检测对硅通孔(TSV)造成损伤的风险,提出了一种非损伤的TSV测试方法。用TSV作为负载,通过环形振荡器测量振荡周期。TSV缺陷造成电阻电容参数的变化,导致振荡周期的变化。通过测量这些变化可以检测TSV故障,同时对TSV故障的不同位置引起的周期变化进行了研究与分析,利用最小二乘法拟合出通过周期来判断故障位置的曲线,同时提出预测模型推断故障电阻范围。测试结构是基于45 nm PTM COMS工艺的HSPICE进行设计与模拟,模拟结果表明,与同类方法相比,此方法在测试分辨故障的基础上对TSV不同位置的故障进行分析和判断,并能推断故障电阻范围。
To avoid the risk of damage to TSVs with conventional probes, a non-invasive TSV test method is proposed. Using TSV as a load, the oscillation period is measured by a ring oscillator. TSV defects caused by changes in resistance and capacitance parameters, leading to changes in the oscillation period. By measuring these changes, it is possible to detect TSV faults, and to study and analyze the periodic variations caused by TSV faults at different positions. The least squares method is used to fit the curve to determine the fault location through the cycle. At the same time, a prediction model is proposed to infer the fault resistance range . The test structure is designed and simulated based on the HSPICE of 45 nm PTM COMS process. The simulation results show that compared with similar methods, this method can analyze and judge the faults in different positions of TSV on the basis of testing and resolving faults, Resistance range.