论文部分内容阅读
介绍了一种基于标准硅工艺的电容读出式微悬臂梁非制冷红外探测器的设计、制作以及集成读出电路的设计。该探测器用于探测室温下物体的红外辐射,其响应波长为8～12μm。由于氮化硅和铝的热膨胀系数相差很大,用这两种材料的薄膜做成的双材料微悬臂梁在红外辐射下会发生弯曲,微悬臂梁和衬底形成一个可变电容,通过检测电容的变化来反映微悬臂梁的弯曲,从而可以探测红外辐射的情况。采用和探测器集成的CMOS读出电路对探测器信号进行读取,微悬臂梁的电容灵敏度可达2.5 fF/K,温度分辨率为0.1 K。
The design, fabrication and integrated readout circuit design of a capacitive readout micro-cantilever uncooled infrared detector based on a standard silicon process are introduced. The detector used to detect objects at room temperature infrared radiation, the response wavelength of 8 ~ 12μm. Due to the large thermal expansion coefficients of silicon nitride and aluminum, a bimaterial microcantilever made of these two materials is bent under infrared radiation. The microcantilever and the substrate form a variable capacitance that passes through the detection Capacitance changes to reflect the micro-cantilever bending, which can detect infrared radiation situation. The detector signal is read using a CMOS readout circuit integrated with the detector. The capacitance of the micro-cantilever is up to 2.5 fF / K with a temperature resolution of 0.1K.