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为了抑制异质栅SOI MOSFET的漏致势垒降低效应,在沟道源端一侧引入了高掺杂Halo结构.通过求解二维电势Poisson方程,为新结构器件建立了全耗尽条件下表面势和阈值电压解析模型,并对其性能改进情况进行了研究.结果表明,新结构器件比传统的异质栅SOI MOSFETs能更有效地抑制漏致势垒降低效应,并进一步提高载流子输运效率.新结构器件的漏致势垒降低效应随着Halo区掺杂浓度的增加而减弱,但随Halo区长度非单调变化.解析模型与数值模拟软件MEDICI所得结果高度吻合.
In order to suppress the leakage barrier reduction effect of the heterojunction SOI MOSFET, a highly doped Halo structure is introduced on the source side of the channel.Through solving Poisson’s equation of two-dimensional potential, a fully depleted surface is established for the new structure device Potential and threshold voltage analysis model and its performance improvement were studied.The results show that the new structure of the device than the conventional heteroscaled SOI MOSFETs can more effectively inhibit the leakage barrier reduction effect and further improve the carrier transport The efficiency of drain-barrier reduction of the new structure device decreases with the increase of doping concentration in Halo region, but non-monotonically with the length of Halo region. The analytical model is in good agreement with the result obtained by MEDICI software.