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用提拉法技术生长出了Bi:α-BaB2O4单晶,并进行电子束辐照.测定了电子束辐照前后的吸收谱和荧光发射谱.在808nm波长激光二极管的激发下,电子束辐照后的Bi:α-BaB2O4单晶中观测到了中心波长在1135nm附近、半高宽为52nm左右的近红外宽带发光现象.近红外宽带发光的发光中心是Bi+离子.电子束射线起到了将Bi3+和Bi2+还原至一价态的作用.本文通过对比发现,在不同的辐照剂量处理后的过程中发光中心Bi+离子的产生机理是不相同的,并对其物理化学过程进行了初步的探讨.
The Bi: α-BaB2O4 single crystal was grown by Czochralski method and subjected to electron beam irradiation. The absorption spectra and fluorescence emission spectra were measured before and after electron beam irradiation. Under the excitation of 808nm wavelength laser diode, electron beam The near-infrared broadband luminescence with a central wavelength near 1135nm and a full width at half-maximum (FWHM) of about 52nm has been observed in the Bi: α-BaB2O4 single crystal.The luminescence center of near-infrared broadband luminescence is Bi + ion.The electron beam plays the role of Bi3 + And Bi2 + to monovalent state.In this paper, we found that the mechanism of the formation of Bi + ions in the luminescent center is not the same after the different irradiation doses are treated, and the physicochemical process is discussed preliminarily.