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半导体激光技术是光学工程硕士研究生的核心专业课程,在掌握激光原理的理论基础知识之上,进行实验研究是十分关键的一个环节,而在半导体激光器的研究与开发中,单模法布里-珀罗半导体激光器是最近几年才发展起来的一种新型结构的激光器。笔者对此新型单模半导体激光器件的基本结构和工作原理做介绍,多模激光器在内置反馈外腔的作用下,由于强烈的模式竞争,很容易实现激光器输出具有较高边摸抑制比的单模激光谱,输出的单模激光随激光器操作温度发生漂移。对学生在实验研究过程所遇到的注入锁定行为的关键物理问题做详细的探索性分析和讲解。注入功率和波长失谐是促使激光器发生注入锁定行为的2个重要参数,随波长失谐的增加,使激光器发生注入锁定行为的阈值功率也将被提高,注入功率越高,使激光器发生锁定行为的波长失谐范围也越大。
Semiconductor laser technology is the core of optical engineering master’s professional courses, in mastering the theoretical basis of laser theory, experimental research is a crucial link in the semiconductor laser research and development, single-mode Fabry- Perot semiconductor lasers have been developed in recent years, a new type of structure of the laser. The author of this new single-mode semiconductor laser device to introduce the basic structure and working principle, multi-mode laser built-in feedback under the influence of external cavity, due to strong mode competition, it is easy to achieve the laser output with high side touch inhibition ratio Mode laser spectrum, the output single-mode laser drift with the laser operating temperature. Exploring and analyzing in detail the key physics problems of the injection locking behavior encountered by students in the process of experimental research. The injection power and wavelength detuning are the two important parameters to promote the injection locking behavior of the laser. With the increase of the wavelength detuning, the threshold power that causes the injection locking behavior of the laser will also be increased. The higher the injection power, the locking behavior of the laser occurs The greater the wavelength detuning range.