Nd离子注入到 (111)单晶硅中形成钕掺杂层 ,室温下 ,紫外光 (2 2 0 nm )激发得到了钕掺杂层的蓝紫光的光致发光谱 ,且发光强度随离子注入的剂量增大而增强 .X射线光电子能谱分析表明掺杂层存在 Si— O,Nd— O,Si— Si和 O— O键 .发光主要是由于 Nd3+ 的 4f内层电子的辐射跃迁所致 ,同时 ,离子注入带来的缺陷和损伤也能发光 Nd ions were implanted into the (111) single crystal silicon to form a neodymium doped layer. The photoluminescence spectra of the blue-violet light of the neodymium doped layer were excited by UV light (220 nm) at room temperature, and the luminescence intensity increased with ion implantation X-ray photoelectron spectroscopy analysis showed that there are Si-O, Nd-O, Si-Si and O-O bonds in the doped layer.The luminescence is mainly due to the radiation transition of 4f inner layer electrons of Nd3 + At the same time, defects and damages caused by ion implantation can also emit light