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制备了结构为ITO/CuPc(25nm)/NPB(40nm)/Alq3(xnm)/C60(ynm)/LiF(1nm)/Al(100nm)的有机发光二极管(OLEDs),研究了C60插入层对器件性能的影响。结果表明,在无C60的器件中,当Alq3层较厚时,器件的电流密度-电压(J-V)曲线右移,不利于获得高功率效率;当Alq3层较薄时,又会导致激子在LiF/Al阴极的严重淬灭。实验优化得出,在无C60的器件中,Alq3厚为45nm的器件可获得最高的功率效率。在Alq3与LiF之间插入15nmC60层后,对器件的J-V曲线几乎没有影响,但C60层阻挡了激子向阴极扩散,减少了淬灭。当在Alq3厚度为45nm的器件的Alq3和LiF间插入15nmC60层后,可使器件获得更高的功率效率,尤其是插入15nmC并将Alq厚度降至30nm,获得了最大的功率效率。
Organic light emitting diodes (OLEDs) with structures of ITO / CuPc (25nm) / NPB (40nm) / Alq3 (xnm) / C60 (ynm) / LiF (1nm) / Al The impact of performance. The results show that when the Alq3 layer is thicker, the current density-voltage (JV) curve of the device shifts to the right, which is not conducive to high power efficiency in the case of C60-less devices. When the Alq3 layer is thinner, Severe quenching of LiF / Al cathode. Experimental optimization has shown that the highest power efficiency is achieved in devices without C60, devices with Alq3 thicknesses of 45 nm. The insertion of a 15 nm C60 layer between Alq3 and LiF has almost no effect on the J-V curve of the device, but the C60 layer blocks exciton diffusion to the cathode and reduces quenching. When a 15 nm C60 layer was inserted between Alq3 and LiF of Alq3 with a thickness of 45 nm, a higher power efficiency was obtained for the device. In particular, the maximum power efficiency was obtained when 15 nm C was inserted and the Alq thickness was reduced to 30 nm.