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The reflectivity versus incident angle of a GaP/Au reflector,a GaP/SiO_2/Au triple ODR(omni-directional reflector) and a GaP/ITO/Au triple ODR was calculated.Compared to AlGaInP LEDs with a GaAs absorbing substrate, thin film LEDs with a Au reflector,a SiO_2 ODR and an ITO ODR were fabricated.At a current of 20 mA,the optical output power of four samples was respectively 1.04,1.14,2.53 and 2.15 mW.The Au diffusion in the annealing process reduces the reflectivity of the Au/GaP reflector to 9%.The different transmittance of quarter-wave thickness ITO and SiO_2 induces different optical output power between the SiO_2 and ITO thin film LEDs.The insertion of Zn in the ITO ODR LED does not affect the light output but evidently reduces the voltage.
The reflectivity versus incident angle of a GaP / Au reflector, a GaP / SiO_2 / Au triple ODR (omni-directional reflector) and a GaP / ITO / Au triple ODR was calculated. Compared to AlGaInP LEDs with a GaAs absorbing substrate, LEDs with a Au reflector, a SiO 2 ODR and an ITO ODR were fabricated. At a current of 20 mA, the optical output power of four samples were respectively 1.04, 1.14, 2.53 and 2.15 mW. The Au diffusion in the annealing process reduces the reflectivity of the Au / GaP reflector to 9%. different transmittance of quarter-wave thickness ITO and SiO 2 induces different optical output power between the SiO 2 and ITO thin film LEDs.The insertion of Zn in the ITO ODR LED does not affect the light output but evidently reduces the voltage.