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2.5 MELO(合并外延横向过度生长法) 标准的外延沉积将在单晶和非单晶的两种衬底上形成一层硅膜。附加的沉积气体HCl对沉积生长的硅有腐蚀作用。如果一块晶片包含硅和氧化物两个区域,那么沉积的硅在硅片区域将生长成一层单晶硅,而在氧化物上将生长成非均匀的多晶硅晶粒。由于氧化物上的这种多晶晶粒的表面积很大,因此它们很容易被HCl腐蚀而去除掉,因为多晶晶粒的腐蚀速
2.5 MELO (Combined Epitaxial Lateral Overgrowth) The standard epitaxial deposition will form a silicon film on both single and non-single-crystal substrates. The additional deposition gas HCl has a corrosive effect on the deposited silicon. If a wafer contains both silicon and oxide regions, the deposited silicon will grow into monocrystalline silicon in the region of the wafer and non-uniform polycrystalline silicon grains will grow on the oxide. Due to the large surface area of such polycrystalline grains on the oxide, they are easily removed by HCl corrosion because the etch rate of the polycrystalline grains