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Room-temperature ferrornagnetism was observed in(In_(0.95-x)Sn_xFe_(0.05))_2O_3(x = 0-0.09) films deposited by pulsed laser deposition.XRD results give a direct proof that both Sn and Fe ions have been incorporated into the In_2O_3 lattice.The carrier concentration in the films is obviously increased by the Sn-doping,while the ferromagnetic properties are rarely changed.We think that in our Fe-doped In_2O_3 films,the oxygen vacancy-related bound magnetic polaron model,rather than the carrier-mediated RKKY coupling,is the main mechanism for the observed ferromagnetism.
Room-temperature ferrornagnetism was observed in (In_ (0.95-x) Sn_xFe_ (0.05)) _2O_3 (x = 0-0.09) films deposited by pulsed laser deposition. XRD results give a direct proof that both Sn and Fe ions have been incorporated into the In_2O_3 lattice. The carrier concentration in the films is obviously increased by the Sn-doping, while the ferromagnetic properties are rarely changed. We think that in our Fe-doped In_2O_3 films, the oxygen vacancy-related bound magnetic polaron model, rather than the carrier-mediated RKKY coupling, is the main mechanism for the observed ferromagnetism.