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利用脉冲激光沉积方法在Al/Si衬底上生长出了高质量的n型ZnO单晶薄膜。研究并总结了以金属Al材料制备ZnO薄膜器件欧姆电极的方法。选择功函数合适的金属作为电极材料,比如In、Ti和Al等,可以在n型ZnO薄膜上制作良好的欧姆电极。研究发现,在金属Al和n型ZnO膜之间生长一层高掺杂的AZO层,可得到比Al与n型ZnO直接接触更优良的欧姆性能。并且,通过高温退火可以有效提高金属Al电极的结晶质量和电导率,降低电极与n型ZnO界面处的接触势垒,从而实现优良的欧姆接触性能。
High quality n-type ZnO single crystal thin films were grown on Al / Si substrates by pulsed laser deposition. Research and summarize the method of preparing ohmic electrode of ZnO thin film device by metal Al material. Select the appropriate metal work function as the electrode material, such as In, Ti and Al, etc., can be made in the n-type ZnO thin film good ohmic electrode. It was found that the growth of a highly doped AZO layer between the metallic Al and the n-type ZnO film gave better ohmic properties than the direct contact between Al and n-type ZnO. Moreover, the high-temperature annealing can effectively improve the crystal quality and electrical conductivity of the metal Al electrode and reduce the contact barrier between the electrode and the n-type ZnO interface to achieve excellent ohmic contact performance.