论文部分内容阅读
本文提出了一个新的深亚微米ＭＯＳＦＥＴ模型，它计入了影响深亚微米器件工作的各种二级物理效应．模型采用一个统一的公式描述所有的器件工作区，可以保证无穷阶连续．不仅适用于数字电路，而且可用于模拟电路的设计．模型计算的结果与实测器件的结果十分一致．
This article proposes a new deep sub-micron MOSFET model that accounts for the various secondary physical effects that affect the operation of deep sub-micron devices. The model uses a uniform formula to describe all the device work areas and guarantees infinite order continuity. Not only for digital circuits, but also for analog circuit design. The result of the model calculation is in good agreement with the measured device.