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利用氢微波等离子体溅射和浓酸中沸煮方法分别制备了氢、氧终端掺硼金刚石薄膜.借助X射线光电子能谱及接触角检测对两种终端薄膜表面进行了分析,通过扫描探针显微镜研究了针尖和样品间的扫描隧道谱.结果表明,氢终端掺硼金刚石表面能带向上弯曲,在高于价带顶位置存在浅受主能级;氧终端表面能带向下弯曲,带隙较宽,带隙中不存在表面态.对两种终端金刚石薄膜的导电机理进行了讨论.
Hydrogen and oxygen-terminated boron-doped diamond films were prepared by hydrogen microwave plasma sputtering and concentrated acid boiling method, respectively. The surface of the two terminal films were analyzed by X-ray photoelectron spectroscopy and contact angle measurement. The scanning tunneling spectrum between the tip and the sample was investigated by microscope.The results showed that the energy band at the hydrogen-terminated boron-doped diamond surface was bent upward and there was a shallow acceptor level above the top of the valence band. The gap is wide and there is no surface state in the bandgap. The conduction mechanism of two terminal diamond films is discussed.