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我们利用分子束外延（ＭＢＥ）方法研制出了高质量的ＩｎＧａＡｓ／ＧａＡｓ／ＡＩＧａＡｓ应变量子阱激光器外延材料，其最低的阈值电流密度可达到１４０Ａ／ｃｍ２，激发波长在９８０ｕｒｎ左右．通过脊型波导结构的制备，获得了高性能的适合于掺铒光纤放大器用的９８０ｕｒｎ量子阱激光器泵浦源，其典型的阈值电流和外微分量子效率分别为１５ｍＡ和０．８ｍＷ／ｍＡ，基横模的输出功率大于８０ｍＷ，器件在５０℃，８０ｍｗ的恒功率老化实验表明，器件具有较好的可靠性．通过与掺铒光纤的耦合，其组合件出纤功率可达６０ｍＷ以上．
We developed a high quality InGaAs / GaAs / AIGaAs strained quantum well laser epitaxial material by molecular beam epitaxy (MBE) with the lowest threshold current density of 140A / cm2 and excitation wavelength of 980urn. Through the preparation of the ridge waveguide structure, a 980uN quantum well laser pumping source suitable for an erbium-doped fiber amplifier is obtained. The typical threshold current and external differential quantum efficiency are 15mA and 0.8mW / mA, respectively The output power of the transverse mode is greater than 80mW. The constant power aging experiment of the device at 50 ℃ and 80mw shows that the device has good reliability. Through the coupling with erbium-doped optical fiber, the output power of the assembly can reach more than 60mW.