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本文介绍作者自行设计的原子层沉积(ALD)实验系统和所沉积薄膜的检测结果。为了研究ALD技术,作者设计了一套试验性的ALD沉积系统。该系统主要由反应腔、前驱体容器、真空泵、控制系统等部件构成。两个前驱体容器带有加热装置,支持气体或液体前驱体。前驱体、反应腔的温度,沉积过程中气体的交替,以及各种参数都可以设定,并由控制系统自动控制。在系统测试中,使用Al2(CH3)3和H2O作为前驱体,在含有Si-H键的Si基片上沉积Al2O3高k介质薄膜。使用电子探针分析仪分析薄膜成分后,证实了所沉积的薄膜是Al2O3。使用XPS分析薄膜表面时只检测到Al,O元素,没有检测到Si元素,说明Al2O3薄膜是连续的,完整地覆盖了Si表面。使用X射线光电子谱检测元素面分布的结果显示,Al,O在Si上的分布具有较好均一性,表明Al2O3薄膜的均匀性良好。使用电子束照射已沉积Al2O3的Si基片时,发现有大量电子累积在薄膜表面,说明所沉积的Al2O3具有良好的介电性。
This article describes the author’s own design of the atomic layer deposition (ALD) experimental system and the deposited film test results. In order to study ALD technology, the authors designed a pilot ALD deposition system. The system is mainly composed of reaction chamber, precursor container, vacuum pump, control system and other components. The two precursor containers have heating means to support the gas or liquid precursor. The temperature of the precursor, the reaction chamber, the alternation of gases during deposition, and various parameters can be set and automatically controlled by the control system. In the system test, Al 2 (CH 3) 3 and H 2 O were used as precursors to deposit Al 2 O 3 high-k dielectric films on Si substrates containing Si-H bonds. After analyzing the film composition using an electron probe analyzer, it was confirmed that the deposited film was Al2O3. When using XPS to analyze the surface of the film, only Al and O elements were detected, and no Si element was detected, indicating that the Al2O3 film was continuous and completely covered the Si surface. The results of X-ray photoelectron spectroscopy examination of the element surface distribution show that the distribution of Al and O on Si has good uniformity, indicating that the uniformity of the Al2O3 film is good. When an electron beam was used to irradiate the Al-deposited Si substrate, a large amount of electrons were found to accumulate on the surface of the film, indicating that the deposited Al 2 O 3 had good dielectric properties.