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研究了直流ＰＣＶＤ ＴｉＮ膜的断口结构和机械性能。用扫描电镜观察了４００℃～７００℃ 下沉积的 ＴｉＮ膜．总结了在本条件下所得 ＰＣＶＤ－ＴｉＮ膜的温度－结构关系，与 ＰＶＤ 法相比，其主要差别是化学反应的参与对膜结构有重要影响，以及膜生长时的良好绕镀 性引起的结构特征．
The fracture structure and mechanical properties of DC PCVD TiN film were studied. The deposited TiN films at 400 ℃ ~ 700 ℃ were observed by SEM. The temperature-structure relationship of the PCVD-TiN films obtained under these conditions is summarized. The main difference between these two methods is that the chemical reaction has an important influence on the structure of the films and the structural characteristics caused by the good plating during the film growth .