1 简介高频化、智能化、模块化是电力半导体器件发展的主要方向,IGBT即是MOS与BJT复合型功率模块,它既有MOSFET管易于驱动的特点,又具有功率晶体管电压、电流容量人的优点,其频率介于MOSFET管与晶体管之间,在较高频率人、中功率的场合目前是首选器件,其与晶体管相比,控制电路简单,驱动电路功耗小,便于集成化及 1 Brief introduction High-frequency, intelligent, modular is the main direction of the development of power semiconductor devices, IGBT is the MOS and BJT composite power module, it has the characteristics of easy to drive MOSFET tube, but also has the power transistor voltage, current capacity of people The advantage of its frequency between the MOSFET tube and transistor, at higher frequencies, the power of the occasion is the preferred device, compared with the transistor, the control circuit is simple, the drive power consumption is small, easy to integrate and