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用改进的溶胶 -凝胶法在Pt(111) /Ti/SiO2 /Si(10 0 )衬底上制备了不同厚度的高度 (111)取向的Pb(Zr0 .53 Ti0 .4 7)O3 薄膜。运用X射线衍射 (XRD)和原子力显微镜 (AFM )分析了薄膜的微结构 ,原子力显微镜表明厚度为 0 .3μm和 0 .5 6 μm的PZT薄膜的晶粒尺寸和表面粗糙度分别为 0 .2～ 0 .3μm、2～3μm和 0 .92nm、34nm。 0 .3μm和 0 .5 6 μmPZT薄膜的剩余极化 (Pr)和矫顽场 (Ec)分别为 32 .2 μC/cm2 、79.9kV/cm ,2 7.7μC/cm2 、5 4.4kV/cm ;在频率 10 0KHz时 ,薄膜的介电常数和介电损耗分别为 5 39、0 0 6 6 ,82 1、0 .0 2 9。
Pb (Zr0.53Ti0.47) O3 films with different thickness and height (111) were prepared on Pt (111) / Ti / SiO2 / Si (100) substrates by a modified sol-gel method. The microstructure of the films was analyzed by X-ray diffraction (XRD) and atomic force microscopy (AFM). The atomic force microscopy showed that the grain size and surface roughness of PZT films with thickness of 0.3 μm and 0.56 μm were 0.2 ~ 0 .3μm, 2 ~ 3μm and 0.92nm, 34nm. Residual polarization (Pr) and coercive field (Ec) of 0 .3 μm and 0.56 μm PZT films were 32.2 μC / cm2, 79.9 kV / cm2, 7.77 μC / cm2 and 54.4 kV / At a frequency of 10 0 KHz, the dielectric constant and dielectric loss of the films are respectively 5 39,0 0 6 6, 82 1,0 .0 2 9.