论文部分内容阅读
设计了一种GaN场效应晶体管(FET)开关用高压高速驱动器电路,该电路集成了TTL输入级、高压电平转换级及大功率输出级电路,其主要功能是对输入的TTL信号进行电平转换,输出0 V/负高压信号。输入级采用施密特结构实现输入兼容TTL信号的同时提高了输入噪声容限,电平转换级、输出级对传统电路结构做了改进,转换速度更快,功耗更低。该电路采用标准硅基高压CMOS工艺制造流片,芯片测试结果表明,负电源工作电压为-5~-40 V,静态电流小于10μA,动态电流为5 m A@10 MHz,传输延时小于20 ns。芯片尺寸为1.42 mm×1.83 mm。该电路具有响应速度快、功耗低以及抗噪声能力强等特点,可广泛应用于微波通信系统中。
A high voltage and high speed driver circuit for GaN field effect transistor (FET) switching is designed. The circuit integrates a TTL input stage, a high voltage level conversion stage and a high power output stage circuit. The main function of the circuit is to electrically input the TTL signal Flat conversion, output 0 V / negative high voltage signal. The input stage adopts Schmidt structure to realize the input compatible TTL signal, meanwhile, the input noise margin is improved. The level conversion stage and the output stage improve the traditional circuit structure, and the conversion speed is faster and the power consumption is lower. The circuit uses a standard silicon-based high-voltage CMOS process to fabricate a chip. The chip test results show that the negative supply voltage is -5 ~ -40 V, the quiescent current is less than 10 μA, the dynamic current is 5 m A @ 10 MHz, the transmission delay is less than 20 ns. The chip size is 1.42 mm × 1.83 mm. The circuit has the characteristics of fast response, low power consumption and strong anti-noise ability, which can be widely used in microwave communication systems.