【摘 要】
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This work presents a high-gain broadband inverter-based cascode transimpedance amplifier fabricated in a 65-nm CMOS process.Multiple bandwidth enhancement techniques,including input bonding wire,input series on-chip inductive peak-ing and negative capacit
【机 构】
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School of Microelectronics and Engineering Research Center of Integrated Circuits for Next-Generatio
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This work presents a high-gain broadband inverter-based cascode transimpedance amplifier fabricated in a 65-nm CMOS process.Multiple bandwidth enhancement techniques,including input bonding wire,input series on-chip inductive peak-ing and negative capacitance compensation,are adopted to overcome the large off-chip photodiode capacitive loading and the miller capacitance of the input device,achieving an overall bandwidth enhancement ratio of 8.5.The electrical measure-ment shows TIA achieves 58 dBΩ up to 12.7 GHz with a 180-fF off-chip photodetector.The optical measurement demonstrates a clear open eye of 20 Gb/s.The TIA dissipates 4 mW from a 1.2-V supply voltage.
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