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通过对半导体激光器在空间环境中辐射损伤机理的分析,得到了器件在辐射条件下的性能退化规律以及辐射过程中的退火规律。在此基础上,建立了辐射应力加速寿命实验模型,获得了故障时间、加速因子、故障概率分布函数、概率密度函数和平均故障前时间的表达式。模拟了三组应力分别为100、50和10Gy/s情况下器件的性能退化数据,进而对加速寿命实验模型的参数进行了估算,求得器件在0.03Gy/s的正常应力条件下的故障时间为43862h。基于威布尔故障分布,利用应力为50Gy/s的加速试验模拟数据,得到了器件的故障概率分布函数以及平均故障前时间,其平均故障前时间约为39755.8h。
By analyzing the radiation damage mechanism of the semiconductor laser in the space environment, the degradation law of the device under the radiation condition and the annealing rule in the radiation process are obtained. On this basis, an experimental model of accelerated life of radiation stress was established, and the expressions of failure time, acceleration factor, probability distribution function, probability density function and mean time to failure were obtained. The performance degradation data of the device under three stress conditions of 100, 50 and 10 Gy / s were simulated, and the parameters of the accelerated life model were estimated. The failure time of the device under normal stress of 0.03 Gy / s was obtained. For 43862h. Based on the distribution of Weibull fault, the probability distribution function and the average pre-fault time of the device are obtained by using the accelerated simulation data of stress 50Gy / s. The average pre-fault time is about 39755.8h.