论文部分内容阅读
介绍了多晶硅、单晶硅的同步外延 .采用两步外延工艺 ,研究了硅烷流量、外延时间以及外延温度对外延质量参数 α的影响 .硅烷流量大、初始诱生时间短 ,则单晶硅条宽 ,多晶硅横向蔓延弱 ,但外延层质量可能较差 .较优的条件是 :硅烷诱生生长流量为 13.1～ 17.5 sccm,正常生长流量为 7.0～ 7.88sccm,初始诱生时间为 30～ 5 0 s.温度影响较复杂 ,当温度低于 980℃时 ,单晶硅条宽随温度增加而增加 ,在 980℃附近达到最大 ,随后随温度增加单晶条宽降低
Synchronous epitaxy of polycrystalline silicon and monocrystalline silicon is introduced.The effects of silane flow rate, epitaxial time and epitaxial temperature on the epitaxial mass parameter α are studied.The silane flow rate is large and the initial induction time is short.The single crystal silicon Wide, and the lateral spread of polysilicon is weak, but the quality of the epitaxial layer may be poor. The optimal conditions are: the silane-induced growth flow rate is 13.1-17.5 sccm, the normal growth rate is 7.0-7.88 sccm, and the initial induction time is 30-500 s. The influence of temperature is complicated. When the temperature is lower than 980 ℃, the width of monocrystalline silicon increases with increasing temperature and reaches the maximum near 980 ℃, and then decreases with increasing temperature