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本文介绍离子束溅射淀积非晶硅(a—Si)及氢化非晶硅(a—Si:H)的技术,讨论工艺条件对薄膜质量的影响并探索艺的优化。研究表明薄膜质量与加速电压、束电流的大小及聚焦,真空室气氛,靶、束和衬底的几何位置,衬底温度,成膜后的退火及氢化等因素有关。文中提供了在工艺条件改变下的薄膜特性曲线及工艺参数与薄膜特性的关系图。
This article describes the ion beam sputtering deposition of amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si: H) technology to discuss the impact of process conditions on film quality and to explore the optimization of art. The results show that the quality of the thin film is related to the factors of accelerating voltage, beam current and focusing, the atmosphere in vacuum chamber, the geometric location of target, beam and substrate, substrate temperature, annealing and hydrogenation after film formation. The article provides the film under the conditions of changes in the characteristics of the curve and the process parameters and the relationship between the characteristics of the film.