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将CuW假合金表面部分Cu腐蚀掉,预留100~200μm厚度的W骨架,随后通过化学镀在W骨架上形成多孔结构Ni扩散层,最后在700℃下用固-液连接的方法制备出CuW/Al整体材料。比较了不同保温时间下界面扩散区域微观组织结构,分析了界面扩散溶解层金属间化合物析出序列。结果表明,CuW/Al界面间多孔结构Ni中间层可有效抑制柱状Al_2Cu相的生成和柯肯达儿孔洞裂纹的产生,界面处生成物主要以Al_2Cu和Al_5W化合物为主。添加多孔结构Ni中间层可提高CuW/Al界面结合性能和电导率。
The surface of the CuW pseudo-alloy is partially etched away from the Cu surface to reserve a W skeleton with a thickness of 100-200 μm, and then a porous structure Ni diffusion layer is formed on the W skeleton by electroless plating. Finally, a CuW / Al overall material. The microstructure of interfacial diffusion region under different holding time was compared and the precipitation sequence of interfacial diffusion-dissolved intermetallic compound was analyzed. The results show that the Ni intermediate layer with porous structure between CuW / Al interface can effectively inhibit the formation of columnar Al 2 Cu phase and the Kekenda pores, and the Al 2 Cu and Al 5 W compounds are dominant in the interface. The addition of porous structure Ni intermediate layer can improve CuW / Al interfacial bonding properties and conductivity.