论文部分内容阅读
“Ａｕ－ｎ~＋（薄）－Ｉｎｐ”结构及界面特性分析夏瑞东，陈定钦（首都师范大学物理系１０００３７）（中国科学院半导体所１０００８３）摘要采用＂ＡＥＳ＂技术分析了Ａｕ－ＩｎＰ接触在不同温度下热处理得到的结果。发现Ａｕ向Ｉｎｐ一侧内扩散，并认为正是这种高掺?..
Analysis of the Structure and Interface Characteristics of Au-n ~ + (Thin) -Inp XIA Rui-Dong, CHEN Ding-Qin (Department of Physics, Capital Normal University 100037) The results obtained under the heat treatment. It was found that Au diffused into the Inp side and believed that it was such a high doping.