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研究了微波退火(MWA)对高k/金属栅中缺陷的修复作用。在频率为1和100 kHz下,对所有Mo/HfO2/Si(100)金属-绝缘体-半导体(MIS)结构样品进行C-V特性测试。通过在频率为100 kHz下测量的C-V特性曲线提取出平带电压与电压滞回窗口,从而估算出高k/金属栅中固定电荷密度和电荷陷阱密度,并用Terman方法计算出快界面态密度。通过研究在频率为1 kHz下测量的C-V特性曲线扭结,定性描述高k/金属栅中的慢界面态密度。结果表明,微波退火后,固定电荷、电荷陷阱、快界面态和慢界面态得到一定程度的修复。此外,和快速热退火相比,在相似的热预算下,微波退火可修复高k/金属栅中更多的固定电荷、慢界面态和电荷陷阱。但对于快界面态的修复,微波退火没有明显的优势。
The repair effect of microwave annealing (MWA) on defects in high-k / metal grids was investigated. C-V characterization was performed on all Mo / HfO2 / Si (100) metal-insulator-semiconductor (MIS) samples at frequencies of 1 and 100 kHz. The flat-band voltage and voltage hysteresis window was extracted from the C-V characteristic curve measured at 100 kHz to estimate the fixed charge density and charge trap density in the high-k / metal gate, and the fast interface state density was calculated using the Terman method. Characterize the slow interface state density in high-k / metal grids by studying kinks of the C-V characteristic measured at a frequency of 1 kHz. The results show that after microwave annealing, fixed charge, charge trap, fast interface state and slow interface state to a certain degree of repair. In addition, compared to rapid thermal annealing, microwave annealing can repair more fixed charges, slow interface states and charge traps in high-k / metal gates with a similar thermal budget. But for the fast interface state repair, microwave annealing has no obvious advantage.