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碲化铯(Cs2Te)阴极是紫外探测器的重要组成部分,其研究的时间较早,在某些紫外探测领域得到了良好应用。但是,同时具有高量子效率及良好日盲特性的阴极制备工艺还需要进一步探索。本文采用电子束蒸发镀膜在石英窗上制备金属Ni膜作为Cs2Te阴极的导电基底,用四探针测试仪、高阻计和分光光度计研究了薄膜的方块电阻和透过率关系。在超高真空系统中进行Cs2Te阴极制备,研究Te膜厚度对阴极量子效率的影响关系。用X光能量色散谱分析Cs2Te光电阴极的组分,研究Cs量与阴极日盲特性的影响关系。结果表明,最佳Ni膜厚度为1.0 nm,其电阻为107Ω/□左右,其紫外波段透过率高达80%;Cs2Te阴极的Te膜厚度为2.0nm时,光电阴极量子效率达12%;当Cs2Te阴极中Cs过量,其波长响应向长波方向延伸,Cs欠量,阴极量子效率降低。
Cesium telluride (Cs2Te) cathode is an important part of the UV detector, its research time earlier, in some areas of UV detection has been well applied. However, cathode preparation with high quantum efficiency and good solar blindness needs further exploration. In this paper, an electron-beam evaporation coating was used to fabricate a metallic Ni film on a quartz window as a conductive substrate for a Cs2Te cathode. The relationship between the sheet resistance and the transmittance of the film was investigated using a four-probe tester, a high resistance meter and a spectrophotometer. The Cs2Te cathode was prepared in an ultra-high vacuum system to study the effect of Te film thickness on the cathode quantum efficiency. The composition of Cs2Te photocathode was analyzed by X-ray energy dispersive spectroscopy to study the relationship between the amount of Cs and the solar cell blindness. The results show that the best Ni film thickness is 1.0 nm, the resistance is about 107Ω / □, the transmittance of UV band is up to 80%; the quantum efficiency of photocathode reaches 12% when the Te film thickness of Cs2Te cathode is 2.0nm; Cs2Te cathode Cs excess, the wavelength response to the long-wave direction extends, Cs less, the cathode quantum efficiency decreases.