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采用改进Hummers法对天然鳞片石墨进行氧化和超声剥离处理制备氧化石墨烯(GO),将十三氟辛基三乙氧基硅烷(FAS)与GO反应并还原得到十三氟辛基三乙氧基硅烷修饰的还原氧化石墨烯(FASRGO)。利用溶液涂覆成膜工艺制得FAS-RGO/聚(偏二氟乙烯-共-六氟丙烯)(P(VDF-HFP))复合材料。采用FTIR、XPS、XRD、Raman和TEM表征了FAS-RGO的结构与形貌,同时研究了FAS-RGO用量对FASRGO/P(VDF-HFP)介电性能的影响。结果表明:FAS包覆在还原氧化石墨烯(RGO)的表面,有效解决了RGO容易团聚的问题,并且FAS的引入提高了RGO与P(VDF-HFP)的界面结合,改善了RGO在P(VDFHFP)中的分散性,FAS-RGO还能提高P(VDF-HFP)的结晶性,促进形成β晶型。当FAS-RGO的体积分数为1.6%,在100 Hz频率时,FAS-RGO/P(VDF-HFP)复合材料的介电常数为62,较纯P(VDF-HFP)提高了5.2倍,同时FAS-RGO/P(VDF-HFP)复合材料的介电损耗较低。
Graphene oxide (GO) was prepared by oxidation and ultrasonic stripping of natural flake graphite with improved Hummers method. The reaction of tridecafluorooctyltriethoxysilane (FAS) with GO and reduction gave tridecafluorooctyltriethoxy Silyl silane modified reduced graphene oxide (FASRGO). FAS-RGO / poly (vinylidene fluoride-co-hexafluoropropylene) (P (VDF-HFP)) composites were prepared by solution coating. The structure and morphology of FAS-RGO were characterized by FTIR, XPS, XRD, Raman and TEM. The effect of FAS-RGO on the dielectric properties of FASRGO / P (VDF-HFP) was also studied. The results showed that FAS coated on the surface of reduced graphene oxide (RGO) effectively solved the problem of agglomeration of RGO, and the introduction of FAS improved the interfacial bonding between RGO and P (VDF-HFP) VDFHFP), FAS-RGO can also improve the crystallinity of P (VDF-HFP) and promote the formation of β crystal form. The dielectric constant of FAS-RGO / P (VDF-HFP) composites was 62, which was 5.2 times higher than that of pure P (VDF-HFP) when the volume fraction of FAS- The dielectric loss of FAS-RGO / P (VDF-HFP) composites is low.