据美国科技媒体报道,IBM计划在今年12月份在美国华盛顿举办的国际电子器件会议上,介绍其采用CMOS兼容工艺制造的2 GHz石墨烯实验型射频集成电路。乔治亚大学纳米研究中心的教授James D.Meindl称CMOS工艺线宽在到达7 nm时将无以为继,而石墨烯工艺将是下一代集成电路制造方法的首 According to US technology media reports, IBM plans to introduce its 2 GHz graphene-based experimental RF IC fabricated in a CMOS-compatible process at the International Electronics Conference held in Washington, DC in December this year. James D. Meindl, a professor at the University of Georgia’s Nano Research Center, says CMOS line widths will not be viable until they reach 7 nm, and the graphene process will be the first of the next generation of integrated circuit fabrication methods