论文部分内容阅读
采用“双生长室”氯化物汽相输运外延技术已研制出异质结InGaAsP/InP。两个独立的生长室,其中一个用来生长InGaAsP,另一个用来生长InP,而它们都连接于一个出口端。衬底是在几秒钟内机械地从一个室传输到另一个室,因而在异质界面不会出现互相沾污的生长,获得了陡峭度小于50 的晶格匹配良好的异质结构界面。用这种技术制备的InGaAsP/InP DH激光器,在室温下CW溅射,发现其阈值相当于液相外延制备的激光器。
Heterojunction InGaAsP / InP has been developed using a “double chamber” chloride vapor transport epitaxial technique. Two separate growth chambers, one for InGaAsP growth and the other for InP growth, are connected to an exit port. The substrate is mechanically transferred from one chamber to another within a few seconds so that no mutual contamination growth occurs at the heterogeneous interface and a well-lattice-matched heterostructured interface with a steepness of less than 50 is obtained. InGaAsP / InP DH lasers fabricated using this technique were CW sputtered at room temperature and found to have thresholds equivalent to those of liquid-phase epitaxial lasers.