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一、引言 在MOSFET研究发展中,轻掺杂漏(LDD)MOSFET和自对准MOSFET已越来越引人注目。这两种MOSFET制造中,边墙的形成是关键。如何精确控制边墙宽度是控制轻掺杂漏长度的基础,而控制边墙的高度和宽度则对自对准硅化钛MOSFET中的栅与漏—源区硅化钛电极的隔离十分重要。此外,边墙技术还可应用于形成亚微米栅以取代掩膜形成栅。本文介绍了一种形成一定高度和宽度的SiO_2边墙的方法。
I. INTRODUCTION In the MOSFET research and development, lightly doped drain (LDD) MOSFET and self-aligned MOSFET have attracted more and more attention. In both MOSFET manufacturing, the formation of the side wall is the key. How to accurately control the width of sidewalls is the basis for controlling the length of lightly-doped drain. Controlling the height and width of the sidewalls is very important for isolating the gate and drain-source Ti silicide electrodes in self-aligned titanium silicide MOSFETs. In addition, sidewall technology can also be applied to form sub-micron gate to replace the mask to form the gate. This article describes a method for forming a sidewall of SiO2 with a certain height and width.