论文部分内容阅读
利用改进的范德堡法微区薄层电阻测试探针技术对n-Si片上的硼扩散图形进行薄层电阻的测量，并用发度表示其分布，可得到薄层电阻的不均匀度及平均值．这种所谓Mapping技术更有利于评价材料质量．
Based on the improved van der Waals micro-area sheet resistance test probe technique, the boron diffusion pattern on n-Si wafer is measured by the sheet resistance, and the distribution is expressed by the hairiness, and the sheet resistance non-uniformity and average value. This so-called Mapping technology is more conducive to the evaluation of material quality.