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据悉美国Ⅱ-Ⅵ公司的宽禁带材料部门(WBG)计划生产100 mm直径的半绝缘SiC衬底。在这个由美国军方资助的为期3年,投资额为750万美元的项目中,Ⅱ-Ⅵ计划在研发的基础上扩大规模生产的问题,以研发出军方大功率雷达的宽禁带芯片所需的衬底材料。
It is reported that the United States II-VI Company’s wide band gap material sector (WBG) plans to produce 100 mm diameter semi-insulating SiC substrate. In this three-year project funded by the U.S. military with a total investment of 7.5 million U.S. dollars, Ⅱ-Ⅵ plans to expand the scale of production on the basis of research and development in order to develop a wide band gap chip for military high-power radars The required substrate material.