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研制用于射线剂量X测试的半导体射敏器件,并说明此器件的工作机理、器件设计、器件制备工艺以及其特性参量的定义和测试结果。 该器件在300k,反向偏压6V时,其灵敏层厚度为60μm。在X射线照射量率小于0.193仑/分情况下,x射线照射量率（?）与X射线在灵敏区产生电流I_x成线性关系。绝对灵敏度在0.48—3.85微安·分/仑范围内。
The research and development of a semiconductor laser-sensitive device for the X-ray dose testing and the definition of the characteristic parameters and the test results of the device’s working mechanism, device design, device fabrication process and its characteristics are described. The device at 300k, reverse bias 6V, the sensitive layer thickness of 60μm. When the X-ray radiation dose rate is less than 0.193 / min, the X-ray radiation dose rate (?) Is linear with the X-ray generation current Ix in the sensitive region. The absolute sensitivity is in the range of 0.48-3.85 microamperes / minute.