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1969年12月美国固体电路杂志(IEEE J.Solid State Circuit SC—4,No.6,P.346-54) 刊登了一篇用砷化镓负阻二极管做显示的文章。美帝通用电气公司1968年曾发表过类似的工作(参看IEEE Trans.Electron Devices ED-15,220,1968;7th Nat.Symp.Information Display)。使用了400个GaAs负阻二极管和场致发光光导转换装置。此文讨论器件结构的改进。
December 1969 IEEE J. Solid State Circuit SC-4, No. 6, p. 346-54 has published an article with gallium arsenide negative-resistance diodes. A similar effort was made by General Electric in 1968 (see IEEE Trans. Electron Devices ED-15, 220, 1968; 7th Nat. Symp. Display). 400 GaAs negative-resistance diodes and electroluminescent conversion devices were used. This article discusses the device structure improvements.