在真空度为 1 3 3 .3μPa时 ,用真空气相沉积方法在玻璃衬底上沉积 Sn O2 薄膜 .通过XRD、SEM等测试分析 ,研究了杂质掺杂及热处理前后的 Sn O2 薄膜的结构、晶粒尺寸、电学特性以及不同工艺条件对薄膜性能的影响 .结果表明 ,掺 Bi有效地抑制了晶粒生长 ,提高了薄膜的稳定性 .掺 Bi后 ,薄膜的电学特性增强 ,而掺 In、Cd则影响不大 . The SnO2 thin film was deposited on a glass substrate by vacuum vapor deposition at a vacuum of 133.3 μPa. The structure and properties of the SnO2 thin films before and after impurity doping and heat treatment were investigated by XRD, SEM and other tests. Particle size, electrical properties and the influence of different process conditions on the properties of the films were investigated. The results show that the doping with Bi effectively inhibits the grain growth and enhances the stability of the films. After doping with Bi, the electrical properties of the films are enhanced. It has little effect.