论文部分内容阅读
利用磁控溅射技术通过氨化Ga2O3/Ta薄膜,合成大量的一维单晶纤锌矿型氮化镓纳米线。用X射线衍射、扫描电子显微镜、高分辨透射电子显微镜,选区电子衍射和光致发光谱对制备的氮化镓进行了表征。结果表明:制备的GaN纳米线是六方纤锌矿结构,其直径大约20～60nm,其最大长度可达10μm左右。室温下光致发光谱测试发现363nm处的较强紫外发光峰。另外,简单讨论了氮化镓纳米线的生长机制。
A large number of one-dimensional single-crystal wurtzite gallium nitride nanowires were synthesized by ammoniating Ga2O3 / Ta films by magnetron sputtering. The prepared gallium nitride was characterized by X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, selected area electron diffraction and photoluminescence spectra. The results show that the prepared GaN nanowires have a hexagonal wurtzite structure with a diameter of about 20-60 nm and a maximum length of about 10 μm. Photoluminescence at room temperature test found a strong UV peak at 363nm. In addition, the growth mechanism of GaN nanowires is briefly discussed.