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本文介绍了测量HgCdTe、InSb光生伏特红外探测器零偏压结阻抗常用的两种测试方法“直流法”和“交流法”,以及我们在这两种方法的基础上提出的“交直流法“和“玻莫合金变压器短路法”。我们用后两种方法测量了元件的零偏压结阻抗;并对测量误差作了分析,分析表明测量误差小于±1%;并从理论上指出Vs为0.1毫伏是最佳测试条件,由实验验证了该条件的正确性。本文还给出了用“交直流法”分析伏安特性的结果;β值是电压的函数,在零偏压附近的β值等于1。
This paper introduces two commonly used methods of DC method and AC method to measure the zero-bias junction impedance of HgCdTe and InSb photodiode detectors, and the AC-DC method proposed by us based on these two methods. And “Bo Mo alloy transformer short circuit method.” We use the latter two methods to measure the component's zero-bias junction impedance; and analyze the measurement error, the analysis shows that the measurement error is less than ± 1%; and theoretically it is pointed out that Vs is 0.1 millivolts is the best test condition, The experimental results verify the correctness of the condition. The paper also presents the results of the analysis of the volt-ampere characteristics by the “AC-DC method”. The beta value is a function of voltage and the beta value around the zero bias is equal to one.