The ceramic composites of Cu-doped La1?xCuxTiO3tδ (x?0.05, 0.15, 0.3, 0.5) were synthesized by con-ventional solid-state reaction. The complex dielectric properties of the composites were investigated as a function of temperature (77 KrTr320 K) and frequency (100 Hzrfr1 MHz) separately. In all com-posites, the dielectric constants increase monotonously and the dielectric loss undulates with tem-perature. And it is clearly observed that extraordinarily high low-frequency dielectric constant ( ? 104) appear at room temperature in La0.5Cu0.5TiO3tδ, which is ?100 times larger than that of La0.95Cu0.05TiO3 tδ. Interestingly, the dielectric constants increase remarkably with the doped Cu con-tents, meanwhile the dielectric loss for all samples is ideal lower than 1 at room temperature in the measured frequency range. By means of complex impedance analysis, the improvements of dielectric properties are attributed to both bulk contribution and grain boundary effect, in which the bulk polaronic relaxation and the Maxwell–Wagner relaxation due to grain boundary response are heightened re-markably with the high doped Cu contents.