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微电子抗辐射设计加固(Radiation Hardening By Design,RHBD)是指在电路设计中采用特殊版图或电路结构达到抗辐射电路的性能要求,且该电路应能使用标准商用生产线的工艺技术进行制造。论述了几种采用SiGe异质结双极晶体管(HBT)的逻辑电路设计加固技术。
Radiation Hardening By Design (RHBD) refers to the performance requirements of a radiation resistant circuit using a special layout or circuit structure in the circuit design and can be manufactured using process technology of a standard commercial production line. Several logic circuit design and reinforcement techniques using SiGe heterojunction bipolar transistors (HBTs) are discussed.