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罗姆在“TECHNO-FRONTIER2014”(7月23~25日,东京有明国际会展中心)上展出了两种Si制功率半导体新产品。分别为第二代超结MOSFET(SJ-MOSFET)产品以及兼具IGBT和SJ-MOSFET优点的功率MOSFET“HybridMOS”。第二代SJ-MOSFET的导通电阻值比第一代产品降低了40%。备有重视低噪声的“EN系列”和比EN系列栅电容低且开关损耗低的“KN系列”。EN系列适合重视降低噪声的电源电路,KN系列适合重视工作效率的电源电路。
ROHM has exhibited two new Si-power semiconductor products at “TECHNO-FRONTIER2014” (July 23 ~ 25, Tokyo Big Sight International Convention Center). Respectively for the second generation superjunction MOSFET (SJ-MOSFET) products and the power MOSFET “HybridMOS ”, which combines the advantages of IGBTs and SJ-MOSFETs. The on-resistance of the second generation SJ-MOSFET is 40% lower than the first generation. Equipped with low noise “EN Series” and “KN Series” with lower switching capacitance and lower capacitance than the EN series. The EN series is suitable for power circuits that reduce noise and the KN series is suitable for power circuits that emphasize work efficiency.