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通过低温和高磁场下的磁输运测量 ,首次在Al0 .2 2 Ga0 .78N GaN异质结中观察到了舒勃尼科夫 德哈斯振荡的双周期特性 ,发现在Al0 .2 2 Ga0 .78N GaN异质结的三角势阱中产生了二维电子气 (2DEG)的第二子带占据 ,发生第二子带占据的阈值 2DEG浓度估算为 7.2× 1 0 12 cm- 2 ,在阈值 2DEG浓度下第一子带和第二子带能级的距离计算为 75meV。
Through the measurement of magnetic transport at low temperature and high magnetic field, the two-cycle characteristic of Schoenkof Devhas oscillation was observed for the first time in the Al0.22Ga0.78N GaN heterojunction and found in Al0.22Ga0. The second subband occupancy of two dimensional electron gas (2DEG) is generated in the triangular potential well of the 78N GaN heterojunction, and the threshold 2DEG concentration of the second subband occupancy is estimated to be 7.2 × 10 12 cm -2. At the threshold 2DEG The distance between the first subband and the second subband at the concentration is calculated as 75 meV.