【摘 要】
：
Modulating the magnetic anisotropy of ferro-magnetic thin films is crucial for constructing high-density and energy efficient magnetic memory devices.Ta/W(N)/Co/Pt multilayers were deposited on silicon substrates by magnetron sputtering at room temperatur
【机 构】
：
School of Materials Science and Engineering,University of Science and Technology Beijing,Beijing 100
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Modulating the magnetic anisotropy of ferro-magnetic thin films is crucial for constructing high-density and energy efficient magnetic memory devices.Ta/W(N)/Co/Pt multilayers were deposited on silicon substrates by magnetron sputtering at room temperature.The influences of N dopant on the magnetic anisotropy of the multilayers were investigated by preparing the sample with N incor-poration.The results indicate that when sputtering W target with only argon gas(Ar),Ta/W/Co/Pt sample shows in-plane magnetic anisotropy(IMA).When sputtering W target at a different amount of N2 and Ar atmosphere,it can induce perpendicular magnetic anisotropy(PMA)for proper N-doped Ta/W(N)/Co/Pt sample.When the gas flow ratio of Ar:N2 is 16:6,the effective magnetic anisotropy constant reach its maximum value of 1.68×105 J·m-3,which enhanced by about 400％than our past works(an-nealing treatment is necessary to induce PMA in Pt/Co/MgO system).X-ray diffraction(XRD)and X-ray reflec-tion(XRR)results demonstrate that N dopants can effec-tively promote the formation of β-W phase and reduce the roughness of W(N)/Co interface,which are beneficial for PMA.X-ray electron spectroscopy(XPS)analysis reveals that N doping redistributes Co charges,nitrogen ions par-ticipate in electron allocation of Co and attract some electrons of Co to form orbital hybridization between Co 3d and N 2p.This may be another important reason for the PMA formation.
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